The barrier potential of a p-n junction depends on$\newline (a)$ type of semiconductor material.$\newline (b)$ amount of doping.$\newline (c)$ temperature.$\newline$Which one of the following is correct?

If in a p-n junction, a square input signal of 10 V is applied as shown, then the output across $R_L$ will be:

Which one of the following represents forward bias diode?

In a p-n junction diode, change in temperature due to heating

For a p-type semiconductor, which of the following statements is true?

The correct Boolean operation represented by the circuit diagram drawn is:

The increase in the width of the depletion region in a p-n junction diode is due to:

For transistor action, which of the following statements is correct?

The electron concentration in an $n$-type semiconductor is the same as hole concentration in a $p$-type semiconductor. An external electric field is applied across each of them. Compare the currents in them.

Consider the following statements (A) and (B) and identify the correct answer.$\newline (A)$ A Zener diode is connected in reverse bias, when used as a voltage regulator.$\newline (B)$ The potential barrier of p-n junction lies between $0.1 V$ to $0.3 V.$

In half-wave rectification, if the input frequency is $60$ Hz, then the output frequency would be:

In the given circuits (a), (b), and (c), the potential drop across the two p-n junctions are equal in:

Given below are two statements:$\newline$Statement I: Photovoltaic devices can convert optical radiation into electricity.$\newline$Statement II: Zener diode is designed to operate under reverse bias in breakdown region.$\newline$In the light of the above statements, choose the most appropriate answer from the options given below:

A full wave rectifier circuit consists of two p-n junction diodes, a centre-tapped transformer, capacitor and a load resistance. Which of these components remove the ac ripple from the rectified output?

Consider the following statements A and B and identify the correct answer:$\\ A.$For a solar-cell, the I-V characteristics lies in the IV quadrant of the given graph.$\\ B.$In a reverse biased pn junction diode, the current measured in (\mu A), is due to majority charge carriers.